Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.6A; Idm: 2.5A VISHAY
Product Code: SQ2398ES-T1-GE3
Brand
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.6A; Idm: 2.5A
Supplier parameters
Product code
SQ2398ES-T1-GE3
Product ID
U-3733677
Brand
VISHAY
Supplier's product code
SQ2398ES-T1-GE3
Case
SOT23
Drain current
1.6A
Drain-source voltage
100V
Gate charge
3.4nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
720mΩ
Polarisation
unipolar
Power dissipation
2W
Pulsed drain current
2.5A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
