Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W

Name: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W
SKU: U-2733019
Price: 0.3 EUR
Availability: InStock

Product Code: NX7002BKMBYL

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Price range

Amount	Price with tax (pcs)
1-9	€0.30
10-49	€0.20
50-99	€0.14
100-249	€0.12
250+	€0.10
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2024-10-10 Estimated delivery

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Product description

Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W

Specifications

SKU

U-2733019

Product code

NX7002BKMBYL

Supplier product description

Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W

Supplier parameters

Product code

NX7002BKMBYL

Supplier's product code

NX7002BKMBYL

Product ID

U-2733019

Case

SOT883B

Drain current

0.2A

Drain-source voltage

60V

Features of semiconductor devices

ESD protected gate

Gate charge

1nC

Gate-source voltage

±20V

Kind of channel

enhanced

Kind of package

tape

Manufacturer

NEXPERIA

Mounting

SMD

On-state resistance

5.7Ω

Polarisation

unipolar

Power dissipation

0.68W

Pulsed drain current

0.9A

Technology

Trench

Type of transistor

N-MOSFET

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