Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW
Supplier parameters
Product code
PMZB290UNE2YL
Brand
NEXPERIA
Supplier's product code
PMZB290UNE2YL
Product ID
U-2594801
Case
SOT883B
Drain current
0.8A
Drain-source voltage
20V
Gate charge
1.4nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
1.19Ω
Polarisation
unipolar
Power dissipation
0.35W
Pulsed drain current
4A
Technology
Trench
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .