Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W LUGUANG ELECTRONIC
Product Code: LGE3M30065B
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Useful information
Supplier parameters
Product code
LGE3M30065B
Case
TO247-3
Drain current
64A
Drain-source voltage
650V
Gate charge
147nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
55mΩ
Polarisation
unipolar
Power dissipation
326W
Pulsed drain current
212A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M30065B
Product ID
U-3873580
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