Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W LUGUANG ELECTRONIC
Product Code: LGE3M40065B
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Useful information
Supplier parameters
Product code
LGE3M40065B
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M40065B
Product ID
U-3869671
Case
TO247-3
Drain current
58A
Drain-source voltage
650V
Gate charge
110.8nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
55mΩ
Polarisation
unipolar
Power dissipation
348W
Pulsed drain current
180A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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