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Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W DIOTEC SEMICONDUCTOR

Product Code: DIW065SIC080-DIO
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Product description

Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W DIOTEC SEMICONDUCTOR

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Specifications

SKU
U-4130912
Product code
DIW065SIC080-DIO

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W

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Supplier parameters

Product code
DIW065SIC080-DIO
Brand
DIOTEC SEMICONDUCTOR
Supplier's product code
DIW065SIC080-DIO
Product ID
U-4130912
Case
TO247-3
Drain current
26A
Drain-source voltage
650V
Gate charge
75nC
Gate-source voltage
-5...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
DIOTEC SEMICONDUCTOR
Mounting
THT
On-state resistance
75mΩ
Polarisation
unipolar
Power dissipation
175W
Pulsed drain current
100A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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