Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W WeEn Semiconductors
Product Code: WNSC2M20120R6Q
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W WeEn Semiconductors
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Useful information
Supplier parameters
Product code
WNSC2M20120R6Q
Case
TO247-4
Drain current
94A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
32nC
Gate-source voltage
-12...22V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
WeEn Semiconductors
Mounting
THT
On-state resistance
20mΩ
Polarisation
unipolar
Power dissipation
750W
Pulsed drain current
200A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
WeEn Semiconductors
Supplier's product code
WNSC2M20120R6Q
Product ID
U-3092770
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