Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W GeneSiC SEMICONDUCTOR
Product Code: G3R20MT12K
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W GeneSiC SEMICONDUCTOR
Useful information
Specifications
SKU
U-2246885
Product code
G3R20MT12K
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Useful information
Supplier parameters
Product code
G3R20MT12K
Case
TO247-4
Drain current
90A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
219nC
Gate-source voltage
-5...15V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
GeneSiC SEMICONDUCTOR
Mounting
THT
On-state resistance
20mΩ
Supplier's product code
G3R20MT12K
Product ID
U-2246885
Polarisation
unipolar
Power dissipation
542W
Pulsed drain current
240A
Technology
SiC
Type of transistor
N-MOSFET
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