Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W INFINEON TECHNOLOGIES
Product Code: IMW120R014M1HXKSA1
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Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W
Useful information
Supplier parameters
Product code
IMW120R014M1HXKSA1
Brand
INFINEON
Supplier's product code
IMW120R014M1HXKSA1
Product ID
U-2891186
Case
TO247
Drain current
89.3A
Drain-source voltage
1.2kV
Gate-source voltage
-7...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
27mΩ
Polarisation
unipolar
Power dissipation
227W
Pulsed drain current
267.9A
Technology
SiC
Type of transistor
N-MOSFET
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