Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W ONSEMI
Product Code: NTH4L020N120SC1
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W ONSEMI
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Useful information
Supplier parameters
Product code
NTH4L020N120SC1
Supplier's product code
NTH4L020N120SC1
Product ID
U-1922460
#Promotion
aac_202202
Case
TO247-4
Drain current
84A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
0.22µC
Gate-source voltage
-15...25V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
28mΩ
Polarisation
unipolar
Power dissipation
255W
Pulsed drain current
408A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
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