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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W INFINEON TECHNOLOGIES

Product Code: IMW120R020M1HXKSA1
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Product description

INFINEON
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W INFINEON TECHNOLOGIES

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Specifications

SKU
U-2891187
Product code
IMW120R020M1HXKSA1

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W

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Supplier parameters

Product code
IMW120R020M1HXKSA1
Brand
INFINEON
Supplier's product code
IMW120R020M1HXKSA1
Product ID
U-2891187
Case
TO247
Drain current
71A
Drain-source voltage
1.2kV
Gate-source voltage
-7...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
36mΩ
Polarisation
unipolar
Power dissipation
188W
Pulsed drain current
213A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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