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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W LITTELFUSE

Product Code: LSIC1MO120G0025
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Product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W LITTELFUSE

Specifications

SKU
U-3133762
Product code
LSIC1MO120G0025

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W

Supplier parameters

Product code
LSIC1MO120G0025
Brand
LITTELFUSE
Supplier's product code
LSIC1MO120G0025
Product ID
U-3133762
Case
TO247-4
Drain current
70A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
265nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LITTELFUSE
Mounting
THT
On-state resistance
25mΩ
Polarisation
unipolar
Power dissipation
500W
Pulsed drain current
200A
Technology
SiC
Type of transistor
N-MOSFET
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