Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W BASiC SEMICONDUCTOR
Product Code: B1M080120HK
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Useful information
Supplier parameters
Product code
B1M080120HK
Brand
BASiC SEMICONDUCTOR
Supplier's product code
B1M080120HK
Product ID
U-2709776
Case
TO247-4
Drain current
27A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
149nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
On-state resistance
80mΩ
Polarisation
unipolar
Power dissipation
241W
Pulsed drain current
80A
Technology
SiC
Type of transistor
N-MOSFET
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