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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W ONSEMI
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Useful information
Supplier parameters
Product code
NTH4L040N120SC1
Supplier's product code
NTH4L040N120SC1
Product ID
U-1922461
#Promotion
aac_202202
Case
TO247-4
Drain current
41A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
106nC
Gate-source voltage
-15...25V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
56mΩ
Polarisation
unipolar
Power dissipation
160W
Pulsed drain current
232A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
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