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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W INFINEON TECHNOLOGIES

Product Code: AIMW120R045M1XKSA1
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Product description

INFINEON
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W INFINEON TECHNOLOGIES

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Specifications

SKU
U-1868870
Product code
AIMW120R045M1XKSA1

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W

Useful information

Supplier parameters

Product code
AIMW120R045M1XKSA1
Product ID
U-1868870
#Promotion
aac_202202
Case
TO247
Drain current
36A
Drain-source voltage
1.2kV
Gate-source voltage
-7...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
75mΩ
Polarisation
unipolar
Power dissipation
114W
Pulsed drain current
130A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
INFINEON
Supplier's product code
AIMW120R045M1XKSA1
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .