Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W MICROCHIP TECHNOLOGY
Product Code: MSC080SMA120B
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Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Useful information
Supplier parameters
Brand
MICROCHIP
Supplier's product code
MSC080SMA120B
Product ID
U-1906008
Product code
MSC080SMA120B
#Promotion
aac_202202
Case
TO247-3
Drain current
26A
Drain-source voltage
1.2kV
Gate charge
64nC
Kind of channel
enhanced
Manufacturer
MICROCHIP TECHNOLOGY
Mounting
THT
On-state resistance
0.1Ω
Polarisation
unipolar
Power dissipation
200W
Pulsed drain current
91A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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