Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W STMicroelectronics
Product Code: SCTW40N120G2VAG
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W STMicroelectronics
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Useful information
Supplier parameters
#Promotion
aac_202202
Application
automotive industry
Case
HIP247â„¢
Drain current
25A
Drain-source voltage
1.2kV
Gate charge
63nC
Kind of package
tube
Manufacturer
STMicroelectronics
Mounting
THT
On-state resistance
0.195Ω
Polarisation
unipolar
Power dissipation
290W
Pulsed drain current
100A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
STMicroelectronics
Supplier's product code
SCTW40N120G2VAG
Product ID
U-1919563
Product code
SCTW40N120G2VAG
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