Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W ONSEMI
Product Code: NTH4L160N120SC1
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W ONSEMI
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Useful information
Supplier parameters
Product code
NTH4L160N120SC1
Brand
ON SEMICONDUCTOR
Supplier's product code
NTH4L160N120SC1
Product ID
U-1922463
#Promotion
aac_202202
Case
TO247-4
Drain current
12.3A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
34nC
Gate-source voltage
-15...25V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
224mΩ
Polarisation
unipolar
Power dissipation
55.5W
Pulsed drain current
69A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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