Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W LUGUANG ELECTRONIC
Product Code: LGE3M160120E
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Useful information
Supplier parameters
Product code
LGE3M160120E
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M160120E
Product ID
U-3846310
Case
D2PAK
Drain current
11A
Drain-source voltage
1.2kV
Gate charge
42nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
LUGUANG ELECTRONIC
Mounting
SMD
On-state resistance
0.285Ω
Polarisation
unipolar
Power dissipation
127W
Pulsed drain current
38A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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