Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Product Code: BXW10M1K2H
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Useful information
Specifications
SKU
U-2590570
Product code
BXW10M1K2H
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Useful information
Supplier parameters
Product code
BXW10M1K2H
Case
TO247-3
Drain current
10A
Drain-source voltage
1.2kV
Gate charge
29nC
Gate-source voltage
-3...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
BRIDGELUX
Mounting
THT
On-state resistance
610mΩ
Polarisation
unipolar
Power dissipation
80.6W
Pulsed drain current
40A
Technology
SiC
Type of transistor
N-MOSFET
Supplier's product code
BXW10M1K2H
Product ID
U-2590570
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