Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W ROHM SEMICONDUCTOR
Product Code: SCT2H12NZGC11
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W
Supplier parameters
Product code
SCT2H12NZGC11
Brand
ROYAL OHM
Supplier's product code
SCT2H12NZGC11
Product ID
U-2966375
Case
TO3PFM
Drain current
3.7A
Drain-source voltage
1.7kV
Gate charge
14nC
Gate-source voltage
-6...22V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ROHM SEMICONDUCTOR
Mounting
THT
On-state resistance
1.5Ω
Polarisation
unipolar
Power dissipation
35W
Pulsed drain current
9.2A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
