Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA PanJit Semiconductor
Product Code: PJMD360N60EC-L2
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA PanJit Semiconductor
Specifications
SKU
U-3139351
Product code
PJMD360N60EC-L2
Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Supplier parameters
Product code
PJMD360N60EC-L2
Supplier's product code
PJMD360N60EC-L2
Product ID
U-3139351
Case
TO252AA
Drain current
11A
Drain-source voltage
600V
Gate charge
18.7nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
PanJit Semiconductor
Mounting
SMD
On-state resistance
0.36Ω
Polarisation
unipolar
Power dissipation
87.5W
Pulsed drain current
23A
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
