Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 30A; Idm: 120A SHINDENGEN
Product Code: P30W60HP2V-5100
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Product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 30A; Idm: 120A SHINDENGEN
Useful information
Specifications
SKU
U-1937094
Product code
P30W60HP2V-5100
Supplier product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 30A; Idm: 120A
Useful information
Supplier parameters
Product code
P30W60HP2V-5100
Supplier's product code
P30W60HP2V-5100
Product ID
U-1937094
#Promotion
aac_202202
Case
MTO3PV (TO247AD)
Drain current
30A
Drain-source voltage
600V
Gate charge
70nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
SHINDENGEN
Mounting
THT
On-state resistance
0.23Ω
Polarisation
unipolar
Power dissipation
310W
Pulsed drain current
120A
Technology
Hi-PotMOS2
Type of transistor
N-MOSFET
Unit price
No
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