Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A IXYS
Product Code: MMIX1F230N20T
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Supplier product description
Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Useful information
Supplier parameters
Product code
MMIX1F230N20T
Brand
IXYS
Supplier's product code
MMIX1F230N20T
Product ID
U-261733
Case
SMPD
Drain current
156A
Drain-source voltage
200V
Gate charge
358nC
Gate-source voltage
±20V
Kind of channel
enhanced
Manufacturer
IXYS
Mounting
SMD
On-state resistance
8.3mΩ
Polarisation
unipolar
Power dissipation
600W
Pulsed drain current
630A
Reverse recovery time
200ns
Technology
HiPerFET™
Type of transistor
N-MOSFET
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