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Transistor: N-MOSFET; unipolar; 600V; 70mA; Idm: 0.2A; 1.1W; SOT23 DIODES INCORPORATED

Product Code: DMN60H080DS-7
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Product description

Transistor: N-MOSFET; unipolar; 600V; 70mA; Idm: 0.2A; 1.1W; SOT23 DIODES INCORPORATED

Specifications

SKU
U-2876225
Product code
DMN60H080DS-7

Supplier product description

Transistor: N-MOSFET; unipolar; 600V; 70mA; Idm: 0.2A; 1.1W; SOT23

Supplier parameters

Product code
DMN60H080DS-7
Product ID
U-2876225
Case
SOT23
Drain current
70mA
Drain-source voltage
600V
Gate charge
1.7nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
0.29Ω
Polarisation
unipolar
Power dissipation
1.1W
Pulsed drain current
0.2A
Type of transistor
N-MOSFET
Brand
DIODES INCORPORATED
Supplier's product code
DMN60H080DS-7
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .