Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 DIODES INCORPORATED
Product Code: DMN30H4D1S-7
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 DIODES INCORPORATED
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Supplier parameters
Product code
DMN30H4D1S-7
Brand
DIODES INCORPORATED
Supplier's product code
DMN30H4D1S-7
Product ID
U-2876171
Case
SOT223
Drain current
2A
Drain-source voltage
60V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
0.25Ω
Polarisation
unipolar
Power dissipation
1.69W
Pulsed drain current
6A
Type of transistor
N-MOSFET
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