Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23 DIODES INCORPORATED
Product Code: DMN30H4D0L-7
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23 DIODES INCORPORATED
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Supplier parameters
Product code
DMN30H4D0L-7
Brand
DIODES INCORPORATED
Supplier's product code
DMN30H4D0L-7
Product ID
U-2876170
Case
SOT23
Drain current
0.2A
Drain-source voltage
300V
Gate charge
7.6nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
6Ω
Polarisation
unipolar
Power dissipation
0.47W
Pulsed drain current
2A
Type of transistor
N-MOSFET
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