Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26 DIODES INCORPORATED
Product Code: DMN10H170SVT-7
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26 DIODES INCORPORATED
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26
Supplier parameters
Product code
DMN10H170SVT-7
Case
TSOT26
Drain current
2.1A
Drain-source voltage
100V
Gate charge
9.7nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
0.2Ω
Polarisation
unipolar
Power dissipation
1.7W
Pulsed drain current
11.2A
Type of transistor
N-MOSFET
Unit price
No
Brand
DIODES INCORPORATED
Supplier's product code
DMN10H170SVT-7
Product ID
U-2876062
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