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Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W DIODES INCORPORATED

Product Code: DMN10H170SFG-7
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Product description

Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W DIODES INCORPORATED

Specifications

SKU
U-2876060
Product code
DMN10H170SFG-7

Supplier product description

Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W

Supplier parameters

Product code
DMN10H170SFG-7
Case
PowerDI3333-8
Drain current
3A
Drain-source voltage
100V
Gate charge
14.9nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
0.133Ω
Polarisation
unipolar
Power dissipation
1.3W
Pulsed drain current
16A
Type of transistor
N-MOSFET
Unit price
No
Brand
DIODES INCORPORATED
Supplier's product code
DMN10H170SFG-7
Product ID
U-2876060
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .