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Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W DIODES INCORPORATED

Product Code: DMN10H170SFDE-7
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Product description

Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W DIODES INCORPORATED

Specifications

SKU
U-2876059
Product code
DMN10H170SFDE-7

Supplier product description

Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W

Supplier parameters

Product code
DMN10H170SFDE-7
Product ID
U-2876059
Case
U-DFN2020-6
Drain current
2.7A
Drain-source voltage
100V
Gate charge
9.7nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
0.2Ω
Polarisation
unipolar
Power dissipation
1.31W
Pulsed drain current
10A
Type of transistor
N-MOSFET
Brand
DIODES INCORPORATED
Supplier's product code
DMN10H170SFDE-7
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .