Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W DIODES INCORPORATED
Product Code: DMN10H099SFG-7
Brand
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W DIODES INCORPORATED
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Supplier parameters
Product code
DMN10H099SFG-7
Case
PowerDI3333-8
Drain current
4.5A
Drain-source voltage
100V
Gate charge
25.2nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
99mΩ
Polarisation
unipolar
Power dissipation
1.18W
Pulsed drain current
20A
Type of transistor
N-MOSFET
Unit price
No
Brand
DIODES INCORPORATED
Supplier's product code
DMN10H099SFG-7
Product ID
U-2876057
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
