Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V NEXPERIA
Product Code: GAN063-650WSAQ
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Product description
Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V NEXPERIA
Useful information
Specifications
Supplier product description
Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Useful information
Supplier parameters
Product code
GAN063-650WSAQ
Brand
NEXPERIA
Supplier's product code
GAN063-650WSAQ
Product ID
U-194577
Case
SOT429
Drain current
24.4A
Drain-source voltage
650V
Gate charge
15nC
Gate-source voltage
±20V
Kind of package
tube
Kind of transistor
cascode
Manufacturer
NEXPERIA
Mounting
THT
On-state resistance
50mΩ
Polarisation
unipolar
Power dissipation
143W
Pulsed drain current
150A
Technology
GaN
Type of transistor
N-JFET/N-MOSFET
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