Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88 TAIWAN SEMICONDUCTOR
Product Code: TSG65N110CE-RVG
Brand
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Product description
Brand
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88 TAIWAN SEMICONDUCTOR
Specifications
Supplier product description
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Supplier parameters
Product code
TSG65N110CE-RVG
Supplier's product code
TSG65N110CE-RVG
Product ID
U-4157843
Case
PDFN88
Drain current
18A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
4nC
Gate-source voltage
-10...7V
Kind of channel
enhanced
Kind of package
tape
Kind of transistor
HEMT
Manufacturer
TAIWAN SEMICONDUCTOR
Mounting
SMD
On-state resistance
0.11Ω
Polarisation
unipolar
Pulsed drain current
35A
Technology
GaN
Type of transistor
N-JFET
Brand
TAIWAN SEMICONDUCTOR
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