Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A INFINEON TECHNOLOGIES
Product Code: IGT60R190D1SATMA1
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Supplier product description
Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Useful information
Supplier parameters
Product code
IGT60R190D1SATMA1
Product ID
U-215194
Case
PG-HSOF-8-3
Drain current
12.5A
Drain-source voltage
600V
Gate charge
3.2nC
Gate current
7.7mA
Gate-source voltage
-10V
Kind of channel
enhanced
Kind of package
tape
Kind of transistor
HEMT
Manufacturer
INFINEON TECHNOLOGIES
Mounting
SMD
On-state resistance
0.19Ω
Polarisation
unipolar
Power dissipation
55.5W
Pulsed drain current
23A
Technology
CoolGaN™
Type of transistor
N-JFET
Brand
INFINEON
Supplier's product code
IGT60R190D1SATMA1
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