Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK ONSEMI
Product Code: FQI7N80TU
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Supplier parameters
Product code
FQI7N80TU
Supplier's product code
FQI7N80TU
Product ID
U-2349556
Case
I2PAK
Drain current
4.2A
Drain-source voltage
800V
Gate charge
52nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
1.5Ω
Polarisation
unipolar
Power dissipation
167W
Pulsed drain current
26.4A
Type of transistor
N-MOSFET
Brand
ON SEMICONDUCTOR
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