Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK ONSEMI
Product Code: FQI5N60CTU
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Supplier parameters
Product code
FQI5N60CTU
Supplier's product code
FQI5N60CTU
Product ID
U-2349555
Case
I2PAK
Drain current
2.6A
Drain-source voltage
600V
Gate charge
19nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
2.5Ω
Polarisation
unipolar
Power dissipation
100W
Pulsed drain current
18A
Type of transistor
N-MOSFET
Brand
ON SEMICONDUCTOR
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