Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK ONSEMI
Product Code: FQI4N80TU
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Supplier parameters
Product code
FQI4N80TU
Supplier's product code
FQI4N80TU
Product ID
U-2349552
Case
I2PAK
Drain current
2.47A
Drain-source voltage
800V
Gate charge
25nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
3.6Ω
Polarisation
unipolar
Power dissipation
130W
Pulsed drain current
15.6A
Type of transistor
N-MOSFET
Brand
ON SEMICONDUCTOR
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