Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W YANGJIE TECHNOLOGY
Product Code: YJQ4666B-YAN
Brand
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Brand
Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W YANGJIE TECHNOLOGY
Useful information
Specifications
Supplier product description
Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W
Useful information
Supplier parameters
Product code
YJQ4666B-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJQ4666B-YAN
Product ID
U-222313
Case
DFN2020-6
Drain current
-5.6A
Drain-source voltage
-16V
Gate charge
7.2nC
Gate-source voltage
±10V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
YANGJIE TECHNOLOGY
Mounting
SMD
On-state resistance
60mΩ
Polarisation
unipolar
Power dissipation
2.2W
Pulsed drain current
-28A
Technology
TRENCH POWER LV
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
