Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Product Code: SSM6J501NU
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Product description
Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Useful information
Specifications
SKU
U-338192
Product code
SSM6J501NU
Supplier product description
Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Useful information
Supplier parameters
Product code
SSM6J501NU
Supplier's product code
SSM6J501NU
Product ID
U-338192
Case
uDFN6
Drain current
-10A
Drain-source voltage
-20V
Features of semiconductor devices
ESD protected gate
Gate charge
29.9nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
TOSHIBA
Mounting
SMD
On-state resistance
43mΩ
Polarisation
unipolar
Power dissipation
1W
Pulsed drain current
-30A
Type of transistor
P-MOSFET
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