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Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK ONSEMI

Product Code: FQB8P10TM
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Product description

Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK ONSEMI

Specifications

SKU
U-2349526
Product code
FQB8P10TM

Supplier product description

Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK

Supplier parameters

Product code
FQB8P10TM
Supplier's product code
FQB8P10TM
Product ID
U-2349526
#Promotion
aac_202202
Case
D2PAK
Drain current
-5.7A
Drain-source voltage
-100V
Gate charge
15nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
530mΩ
Polarisation
unipolar
Power dissipation
65W
Pulsed drain current
-32A
Type of transistor
P-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
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