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Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 7.5A; SOP8 YANGJIE TECHNOLOGY

Product Code: YJS12G06A-YAN
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Product description

Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 7.5A; SOP8 YANGJIE TECHNOLOGY

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Specifications

SKU
U-222316
Product code
YJS12G06A-YAN

Supplier product description

Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 7.5A; SOP8

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Supplier parameters

Product code
YJS12G06A-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJS12G06A-YAN
Product ID
U-222316
Case
SOP8
Drain current
7.5A
Drain-source voltage
60V
Gate charge
31nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
YANGJIE TECHNOLOGY
Mounting
SMD
On-state resistance
13mΩ
Polarisation
unipolar
Power dissipation
1.24W
Pulsed drain current
48A
Technology
SPLIT GATE TRENCH
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .