Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W YANGJIE TECHNOLOGY
Product Code: YJQ35G10A-YAN
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Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W YANGJIE TECHNOLOGY
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Supplier parameters
Product code
YJQ35G10A-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJQ35G10A-YAN
Product ID
U-1928821
#Promotion
aac_202202
Case
DFN3.3x3.3
Drain current
35A
Drain-source voltage
100V
Gate charge
20nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
YANGJIE TECHNOLOGY
Mounting
SMD
On-state resistance
20mΩ
Polarisation
unipolar
Power dissipation
54W
Pulsed drain current
120A
Type of transistor
N-MOSFET
Unit price
No
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