Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23 YANGJIE TECHNOLOGY
Product Code: YJL03G10A-YAN
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Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23 YANGJIE TECHNOLOGY
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Useful information
Supplier parameters
Product code
YJL03G10A-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJL03G10A-YAN
Product ID
U-1928819
#Promotion
aac_202202
Case
SOT23
Drain current
3A
Drain-source voltage
100V
Gate charge
4.3nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
YANGJIE TECHNOLOGY
Mounting
SMD
On-state resistance
0.14Ω
Polarisation
unipolar
Power dissipation
1.2W
Pulsed drain current
121A
Type of transistor
N-MOSFET
Unit price
No
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