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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W VISHAY

Product Code: SIS402DN-T1-GE3
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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W VISHAY

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Specifications

SKU
U-1929220
Brand
Product code
SIS402DN-T1-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W

Useful information

Supplier parameters

Product code
SIS402DN-T1-GE3
Brand
VISHAY
Supplier's product code
SIS402DN-T1-GE3
Product ID
U-1929220
#Promotion
aac_202202
Case
PowerPAK® 1212-8
Drain current
35A
Drain-source voltage
30V
Gate charge
12nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
8mΩ
Polarisation
unipolar
Power dissipation
33W
Pulsed drain current
70A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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