Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
Product Code: IPN60R600P7S
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Product description
Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
Useful information
Specifications
SKU
U-217018
Product code
IPN60R600P7S
Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
Useful information
Supplier parameters
Product code
IPN60R600P7S
Supplier's product code
IPN60R600P7S
Product ID
U-217018
Case
PG-SOT223
Drain current
4A
Drain-source voltage
600V
Features of semiconductor devices
ESD protected gate
Gate charge
9nC
Gate-source voltage
±20V
Kind of channel
enhanced
Manufacturer
INFINEON TECHNOLOGIES
Mounting
SMD
On-state resistance
0.6Ω
Polarisation
unipolar
Power dissipation
7W
Technology
CoolMOSâ„¢ P7
Type of transistor
N-MOSFET
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