Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK ONSEMI
Product Code: FQB8N60CTM
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Product description
Brand
Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Supplier parameters
Product code
FQB8N60CTM
Supplier's product code
FQB8N60CTM
Product ID
U-2349524
#Promotion
aac_202202
Case
D2PAK
Drain current
4.6A
Drain-source voltage
600V
Gate charge
36nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
1.2Ω
Polarisation
unipolar
Power dissipation
147W
Pulsed drain current
30A
Technology
QFET®
Type of transistor
N-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
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