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Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3
Supplier parameters
Case
TO220-3
Drain current
5.7A
Drain-source voltage
600V
Features of semiconductor devices
ESD protected gate
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
STMicroelectronics
Mounting
THT
On-state resistance
0.75Ω
Polarisation
unipolar
Power dissipation
115W
Technology
SuperMesh™
Type of transistor
N-MOSFET
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