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Transistor: N-MOSFET x2; unipolar; 30V; 2.9A; Idm: 10A; 1.5W; ESD ONSEMI

Product Code: FDMA2002NZ
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Product description

Transistor: N-MOSFET x2; unipolar; 30V; 2.9A; Idm: 10A; 1.5W; ESD ONSEMI

Specifications

SKU
U-2331704
Product code
FDMA2002NZ

Supplier product description

Transistor: N-MOSFET x2; unipolar; 30V; 2.9A; Idm: 10A; 1.5W; ESD

Supplier parameters

Product code
FDMA2002NZ
Brand
ON SEMICONDUCTOR
Supplier's product code
FDMA2002NZ
Product ID
U-2331704
#Promotion
aac_202202
Case
MicroFET
Drain current
2.9A
Drain-source voltage
30V
Gate charge
3nC
Gate-source voltage
±12V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
268mΩ
Polarisation
unipolar
Power dissipation
1.5W
Pulsed drain current
10A
Type of transistor
N-MOSFET x2
Unit price
No
Version
ESD
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