Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 STARPOWER SEMICONDUCTOR
Product Code: GD35PJY120L3S
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Product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 STARPOWER SEMICONDUCTOR
Specifications
SKU
U-2964930
Product code
GD35PJY120L3S
Supplier product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Supplier parameters
Product code
GD35PJY120L3S
Supplier's product code
GD35PJY120L3S
Product ID
U-2964930
Case
L3.0
Collector current
35A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Pulsed collector current
70A
Semiconductor structure
diode/transistor
Technology
Advanced Trench FS IGBT
Type of module
IGBT
Topology
three-phase diode bridge
Unit price
No
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