IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A ONSEMI
Product Code: NCP5181DR2G
Brand
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Product description
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A ONSEMI
Useful information
Specifications
Supplier product description
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Useful information
Supplier parameters
Product code
NCP5181DR2G
Supplier's product code
NCP5181DR2G
Product ID
U-2193468
Case
SO8
Impulse rise time
60ns
Kind of integrated circuit
high-/low-side
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
Number of channels
2
Operating temperature
-40...125°C
Output current
-2.2...1.4A
Protection
undervoltage UVP
Pulse fall time
40ns
Supply voltage
10...20V DC
Type of integrated circuit
driver
Topology
IGBT half-bridge
Voltage class
600V
Brand
ON SEMICONDUCTOR
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